Description
Dec 2, 2009 l High Speed Power Switching l Hard Switched and High Frequency Circuits. S. D. G. PD - 97369. IRLB4030PbF . G. D. S. Gate. Drain. Source. IRLS4030PBF. 4.3. IRLS4030-7PPBF. 3.9. IRLB4030PBF . 4.3. 150V. 20-100. IRF6643TRPBF. 34.5. IRFH5215TRPBF. 58.0. IRFR4615PBF. 13.9. IRFS4615PBF. IRLS4030PBF*. IRLB4030PBF *. 100. 16. 63. 34. IRLR3110ZPBF. Benchmark MOSFETs | Selection Guide. N-Channel MOSFETs. Dual N-Channel MOSFETs.
Part Number | IRLB4030PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 180A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 11360pF @ 50V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 370W (Tc) |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 110A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRLB4030PBF
INFIENON
25000
1.14
HK HEQING ELECTRONICS LIMITED
IRLB4030PBF
Infinen
1000
2.295
HK KK Int'l Co.,Limited
IRLB4030PBF
INFLNEON
3296
3.45
Belt (HK) Electronics Co
IRLB4030PBF
Infineon Technologies A...
1500
4.605
ICK Internation (HK) Co., Limited
IRLB4030PBF
INFINEON/IR
316
5.76
WIN AND WIN ELECTRONICS LIMITED