Description
Dec 4, 2012 Absolute Maximum Ratings. Parameter. Units. VDS. Drain-to-Source Voltage. V. VGS. Gate-to-Source Voltage. ID @ TC = 25 C. Continuous Aug 25, 1997 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per Jan 2, 2006 NOTES. (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Apr 22, 2009 Absolute Maximum Ratings. Parameter. Units. VDS. Drain-to-Source Voltage. VGS. Gate-to-Source Voltage. ID @ TC = 25 C. Continuous Drain This Power MOSFET is the latest development of. STMicroelectronics unique Single Feature. Size strip-based process. The resulting transistor shows
Part Number | IRLB8721 |
Brand | Infineon Technologies AG |
Image |
IRLB8721
INFIENON
795
0.09
HK HEQING ELECTRONICS LIMITED
IRLB8721
Infinen
8900
1.4175
AoHoo Enterprise (HongKong) Co., Limited
IRLB8721
INFLNEON
8000
2.745
Shenzhen Qiangneng Electronics Co., Ltd.
IRLB8721
Infineon Technologies A...
11021
4.0725
Ande Electronics Co., Limited
IRLB8721
INFINEON/IR
21826
5.4
N&S Electronic Co., Limited