Part Number | IRLHM630TR2PBF. |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 21A PQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.1V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 20A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (3x3) |
Package / Case | 8-VQFN Exposed Pad |
Image |
IRLHM630TR2PBF
INFIENON
7272
0.55
MY Group (Asia) Limited
IRLHM630TR2PBF.
Infinen
7387
1.1825
HK HEQING ELECTRONICS LIMITED
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INFLNEON
5122
1.815
ABBI Electronics Company Limited
IRLHM630TR2PBF.
Infineon Technologies A...
9638
2.4475
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRLHM630TR2PBF.
INFINEON/IR
7253
3.08
Yingxinyuan INT'L (Group) Limited