Part Number | IRLHS6342TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 8.7A PQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta), 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1019pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta) |
Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 8.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-PQFN (2x2) |
Package / Case | 6-PowerVDFN |
Image |
IRLHS6342TR2PBF.
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