Part Number | IRLL2703PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 3.9A SOT223 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 3.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
IRLL2703PBF
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