Part Number | IRLL2705TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 3.8A SOT223 |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
IRLL2705TR
INFIENON
157217
0.09
IC Chip Co., Ltd.
IRLL2705TR
Infinen
35800
0.75
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRLL2705TR
INFLNEON
454436
1.41
Hong Kong H.D.W Trading Co., Limited
IRLL2705TR
Infineon Technologies A...
20000
2.07
Yingxinyuan INT'L (Group) Limited
IRLL2705TR
INFINEON/IR
21
2.73
Cicotex Electronics (HK) Limited