Infineon Technologies AG

Description

Dec 14, 2011 IRLML6302 . Description l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm). Apr 28, 2014 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per. Feb 29, 2012 Absolute Maximum Ratings. Symbol. Parameter. Units. VDS. Drain-Source Voltage. V. ID @ TA = 25 C. Continuous Drain Current, VGS @ 10V. EXAMPLE: THIS IS AN IRLML6302 . DATE CODE EXAMPLES: YWW = 9532 = EF . YWW = 9503 = 5C. WW = (1-26) IF PRECEDED BY LAST DIGIT OF Jun 17, 2010 Symbol. Parameter. Units. VDS. Drain-Source Voltage. V. ID @ TA = 25 C. Continuous Drain Current, VGS @ 10V. ID @ TA = 70 C.