Infineon Technologies AG

Description

Feb 9, 2012 Symbol. Parameter. Units. VDS. Drain-Source Voltage. V. ID @ TA = 25 C. Continuous Drain Current, VGS @ 10V. ID @ TA = 70 C. International Rectifiers Small PowIR MOSFETs brings big value to your small power application. By combining the latest high performance silicon technology Sep 25, 2012 These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per Jan 24, 2011 Absolute Maximum Ratings. Symbol. Parameter. Units. VDS. Drain-Source Voltage. V. ID @ TA = 25 C. Continuous Drain Current, VGS @ -4.5 Notes: This part marking information applies to devices produced before 02/26/ 2001. WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDARYEAR. WORK.