Part Number | IRLR120NPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 10A DPAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 185 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRLR120NPBF
INFIENON
60000
0.07
Yingxinyuan INT'L (Group) Limited
IRLR120NPBF
Infinen
36000
1.2925
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRLR120NPBF
INFLNEON
55300
2.515
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRLR120NPBF
Infineon Technologies A...
858
3.7375
FLOWER GROUP(HK)CO.,LTD
IRLR120NPBF
INFINEON/IR
3023
4.96
N&S Electronic Co., Limited