Part Number | IRLR120PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 7.7A DPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 4.6A, 5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRLR120PBF
INFIENON
445
1.7
HK HEQING ELECTRONICS LIMITED
IRLR120PbF
Infinen
4200
2.535
Hongkong Shengshi Electronics Limited
IRLR120PBF
INFLNEON
6482
3.37
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRLR120PBF
Infineon Technologies A...
451
4.205
ATLANTIC TECHNOLOGY LIMITED
IRLR120PBF
INFINEON/IR
626
5.04
Yingxinyuan INT'L (Group) Limited