Part Number | IRLR2905PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 42A DPAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRLR2905PBF
INFIENON
5700
0.79
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRLR2905PBF
Infinen
11700
2.05
Ande Electronics Co., Limited
IRLR2905PBF
INFLNEON
18650
3.31
Fairstock HK Limited
IRLR2905PBF
Infineon Technologies A...
30000
4.57
Bonase Electronics (HK) Co., Limited
IRLR2905PBF
INFINEON/IR
43000
5.83
Bonase Electronics (HK) Co., Limited