Part Number | IRLR3636PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 50A D-PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 3779pF @ 50V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 143W (Tc) |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IRLR3636PBF
INFIENON
3020
0.66
FLOWER GROUP(HK)CO.,LTD
IRLR3636PBF
Infinen
11
1.8725
HK FEILIDI ELECTRONIC CO., LIMITED
IRLR3636PBF
INFLNEON
180
3.085
SUNTOP SEMICONDUCTOR CO., LIMITED
IRLR3636PBF
Infineon Technologies A...
35800
4.2975
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRLR3636PBF
INFINEON/IR
40
5.51
WIN AND WIN ELECTRONICS LIMITED