Infineon Technologies AG

Description

DATASHEET The floating channel can be used to drive an. N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V. Packages. 8-Lead PDIP. IRS2184 . 8-Lead SOIC. IRS2184S . 14-Lead PDIP. IRS21844. 14-Lead SOIC. www.irf.com. 2. AN-1107. Block Diagrams. The IRS2184 and the IR2184 share the same block diagram. The IRS21844 and the. IR21844 share the same block diagram. There are no functional changes between corresponding part numbers. IRS2184S half-bridge driver IC. Application Schematic. Traditionally, IGBT devices have excessive switching losses at the frequencies used in UPS and solar inverters. IRs new. Trench IGBT devices have lower switching energy coupled with Aug 9, 2011 The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V. Feature Comparison: IRS2181(4)/IRS2183(4)/ IRS2184 (4). Qualification Information. Adopting G5 HVIC: IRS2004. (units). IRS2003 IRS2004 IRS2103 IRS2104 IRS2108 IRS21084 IRS2109 IRS21094 IRS2111 IRS2183 IRS21834 IRS2184 IRS21844 IRS2302 IRS2304 IRS2308. Offset voltage. V. 200. 200. 600. 600. 600. 600.