Part Number | JANTXV2N6796 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 8A |
Series | Military, MIL-PRF-19500/557 |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 28.51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Rds On (Max) @ Id, Vgs | 195 mOhm @ 8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-205AF (TO-39) |
Package / Case | TO-205AF Metal Can |
Image |
JANTXV2N6796
INFIENON
5742
1.35
Dedicate Electronics (HK) Limited
JANTXV2N6796
Infinen
1000
2.325
Bonase Electronics (HK) Co., Limited
JANTXV2N6796
INFLNEON
220
3.3
ZHONG HAI SHENG TECHNOLOGY LIMITED
JANTXV2N6796
Infineon Technologies A...
94305
4.275
Cicotex Electronics (HK) Limited
JANTXV2N6796
INFINEON/IR
6000
5.25
RX ELECTRONICS LIMITED