Part Number | NGTB50N120FL2WG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 1200V 100A 535W TO247 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
Power - Max | 535W |
Switching Energy | 4.4mJ (on), 1.4mJ (off) |
Input Type | Standard |
Gate Charge | 311nC |
Td (on/off) @ 25°C | 118ns/282ns |
Test Condition | 600V, 50A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 256ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
NGTB50N120FL2WG
INFIENON
2558
1.35
HONGKONG KUONGSHUN ELECTRONIC LIMITED
NGTB50N120FL2WG
Infinen
8071
2.4025
Hong Kong Yulu International Limited
NGTB50N120FL2WG
INFLNEON
3841
3.455
HK HEQING ELECTRONICS LIMITED
NGTB50N120FL2WG
Infineon Technologies A...
1260
4.5075
ONSTAR ELECTRONICS CO., LIMITED
NGTB50N120FL2WG
INFINEON/IR
9647
5.56
CIS Ltd (CHECK IC SOLUTION LIMITED)