Part Number | PMDPB58UPE,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2P-CH 20V 3.6A HUSON6 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.6A |
Rds On (Max) @ Id, Vgs | 67 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 804pF @ 10V |
Power - Max | 515mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | DFN2020-6 |
Image |
PMDPB58UPE,115
INFIENON
9170
0.08
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
PMDPB58UPE,115
Infinen
4786
1.0475
NEW IDEAS INDUSTRIAL CO., LIMITED
PMDPB58UPE,115
INFLNEON
3641
2.015
CIS Ltd (CHECK IC SOLUTION LIMITED)
PMDPB58UPE,115
Infineon Technologies A...
2324
2.9825
Yingxinyuan INT'L (Group) Limited
PMDPB58UPE115
INFINEON/IR
5061
3.95
N&S Electronic Co., Limited