Part Number | RFD14N05LSM9A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 50V 14A TO-252AA |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
RFD14N05LSM9A
INFIENON
5000000
1.31
Hongkong Shengshi Electronics Limited
RFD14N05LSM9A
Infinen
28660
2.4825
MASSTOCK ELECTRONICS LIMITED
RFD14N05LSM9/A
INFLNEON
100
3.655
Gallop Great Holdings (Hong Kong) Limited
RFD14N05LSM9A
Infineon Technologies A...
55200
4.8275
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
RFD14N05LSM9A
INFINEON/IR
2500
6
Shenzhen guangsenmei Technology Development Co., Ltd