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Description
Datasheet RFP12N10L . N-Channel Logic Level Power MOSFET. 100 V, 12 A, 200 m . These are N-Channel enhancement mode silicon gate power field effect transistors Aug 9, 2014 RFP12N10L . TO-220-3. (92.5-5-2.5DA_AlBW). INTERNAL SUZHOU. 2.030182 g . Each. Terminal Finish. Base Alloy. J-STD-020 MSL Rating. Aug 8, 2014 RFP12N10L . TO-220-3. (92.5-5-2.5DA_AlBW). SUZHOU. INTERNAL. SUZHOU. 2.0301822. Not. Applicable. Terminal. Finish. Base Alloy.
| Part Number | RFP12N10L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 100V 12A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Vgs (Max) | ±10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 12A, 5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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