(4/5) based on 20 customer reviews
Description
Jul 8, 2017 RFP70N06 : N-Channel Power MOSFET 60V, 70A, 14m . For complete documentation, see the data sheet. These are N-Channel power For example the Fairchild RFP70N06 PowerMOS transistor requires a maximum of 115nC of gate charge to transition from off to fully on . For a gate drive This Power MOSFET series realized with. STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate Jan 11, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. RFP70N06 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. This Power MOSFET is the latest development of. STMicroelectronics unique Single Feature. Size strip-based process. The resulting transistor shows
| Part Number | RFP70N06 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 60V 70A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 156nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 70A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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