Infineon Technologies AG

Description

Datasheet 2008-06-02. Rev. 2.5. Page 1. SDP04S60 , SDD04S60. SDT04S60. thinQ! SiC Schottky Diode. Silicon Carbide Schottky Diode. Worlds first 600V Schottky 2013 2 19 VCC = 400V, IC = 6.0A,. VGE = 0.0/15.0V,. rG = 14.7 , L = 60nH,. C = 40pF. L , C from Fig. E. Diode used for turn on results: SDP04S60 Oct 30, 2007 RT1. S237/5. BR1. 8A, 400V. 85~265VAC. CX1. 0.47u/275V. CY2. 2.2nF, Y2, 250V. CY1. 2.2nF, Y2, 250V. C1. 0.1u/630V. D1. SDP04S60 . C2. 8A, 400V. 85~265VAC. CX1. 0.47u/275V. CY2. 2.2nF, Y2, 250V. CY1. 2.2nF, Y2, 250V. C1. 0.1u/630V. D1. SDP04S60 . C2. Vo. Gnd. 390V/300W. R5. 390k, 1%. 8A, 400V. 85~265VAC. CX1. 0.47u/275V. CY2. 2.2nF, Y2, 250V. CY1. 2.2nF, Y2, 250V. C1. 0.1u/630V. D1. SDP04S60 . C2. Vo. Gnd. 390V/300W. R5. 300k, 1%.