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Description
Datasheet Jun 2, 2008 SDT04S60 . thinQ! SiC Schottky Diode. Silicon Carbide Schottky Diode. Worlds first 600V Schottky diode. Revolutionary semiconductor. Oct 30, 2007 SDT04S60 . Diode. 1. D2. 1N5408. Diode. 1. D3. 1N4007. Diode. 1. F1. 5A. Fuse. 1. Fuse Holder. 2. IC1. ICE2PCS03. 1. JP1. 12.5mm, 0.7mm. CY1. 2.2nF, Y2, 250V. Ceramic Cap. Epcos / B81123C1222M000. CY2. 2.2nF, Y2, 250V. Ceramic Cap. Epcos / B81123C1222M000. Connector. D1. SDT04S60 . CX2. 0.47uF, X1, 275V. Ceramic Cap. 1. CY1. 2.2nF, Y2, 250V. Ceramic Cap. 1. CY2. 2.2nF, Y2, 250V. Ceramic Cap. 1. Connector. 3. D1. SDT04S60 . Diode. 1. Jun 17, 2005 SDT04S60 . Diode. 1. D2. 1N5408. Diode. 1. D3. 1N4007. Diode. 1. F1. 5A. Fuse. 1. Fuse Holder. 2. IC1. ICE1PCS02. 1. JP1. 12.5mm, 0.7mm.
| Part Number | SDT04S60 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Infineon Technologies AG |
| Description | DIODE SCHOTTKY 600V 4A TO220-2 |
| Series | thinQ! |
| Packaging | Silicon Carbide Schottky |
| Diode Type | Tube |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 4A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 200µA @ 600V |
| Capacitance @ Vr, F | 150pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image |  |
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HK HEQING ELECTRONICS LIMITED
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ONSTAR ELECTRONICS CO., LIMITED
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