Part Number | SI7100DN-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 8V 35A 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 3810pF @ 4V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 15A, 4.5V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
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SI7100DN-T1-E3
INFIENON
1000
0.21
MY Group (Asia) Limited
SI7100DN-T1-E3
Infinen
2115
1.2075
HK HEQING ELECTRONICS LIMITED
SI7100DN-T1-E3
INFLNEON
271795
2.205
Cicotex Electronics (HK) Limited
SI7100DN-T1-E3
Infineon Technologies A...
7005
3.2025
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7100DN-T1-E3
INFINEON/IR
1200
4.2
Gallop Great Holdings (Hong Kong) Limited