Part Number | SI7964DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 60V 6.1A PPAK SO-8 |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6.1A |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SO-8 Dual |
Supplier Device Package | PowerPAK SO-8 Dual |
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SI7964DP-T1-E3
INFIENON
9164
1.13
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7964DP-T1-E3
Infinen
629
1.9425
Yingxinyuan INT'L (Group) Limited
SI7964DP-T1-E3
INFLNEON
8842
2.755
ATLANTIC TECHNOLOGY LIMITED
SI7964DP-T1-E3
Infineon Technologies A...
8533
3.5675
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI7964DP-T1-E3
INFINEON/IR
203
4.38
Innovation Best Electronics Technology Limited