Description
DIODE GEN PURP 1.2KV 3A WAFER Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55~C ~ 150~C
Part Number | SIDC03D120H6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE GEN PURP 1.2KV 3A WAFER |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 3A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 3A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 27µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Sawn on foil |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
SIDC03D120H6
INFIENON
5589
0.58
Dedicate Electronics (HK) Limited
SIDC03D120H6
Infinen
10
1.0875
Digchip Technology Co.,Limited
SIDC03D120H6
INFLNEON
18000
1.595
MY Group (Asia) Limited
SIDC03D120F6
Infineon Technologies A...
5590
2.1025
Dedicate Electronics (HK) Limited
SIDC03D120F6
INFINEON/IR
18000
2.61
MY Group (Asia) Limited