Description
DIODE GEN PURP 600V 20A WAFER Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55~C ~ 150~C
Part Number | SIDC09D60E6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE GEN PURP 600V 20A WAFER |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 20A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 20A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 150ns |
Current - Reverse Leakage @ Vr | 27µA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Sawn on foil |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
SIDC09D60E6
INFIENON
5000
1.13
TY International components Limited
SIDC09D60E6
Infinen
18000
2.39333333333333
MY Group (Asia) Limited
SIDC09D60F6
INFLNEON
5000
3.65666666666667
TY International components Limited
SIDC09D60E6Y
Infineon Technologies A...
18000
4.92
MY Group (Asia) Limited