Description
DIODE GEN PURP 600V 30A WAFER Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40~C ~ 175~C
Part Number | SIDC09D60F6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE GEN PURP 600V 30A WAFER |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 30A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 30A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 27µA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Sawn on foil |
Operating Temperature - Junction | -40°C ~ 175°C |
Image |
SIDC09D60F6
INFIENON
5000
1.64
TY International components Limited
SIDC09D60F6
Infinen
18000
2.82
MY Group (Asia) Limited
SIDC09D60E6
INFLNEON
5000
4
TY International components Limited
SIDC09D60E6
Infineon Technologies A...
18000
5.18
MY Group (Asia) Limited