Description
DIODE GEN PURP 1.2KV 35A WAFER Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55~C ~ 150~C
Part Number | SIDC23D120H6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE GEN PURP 1.2KV 35A WAFER |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 35A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 35A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 27µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Sawn on foil |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
SIDC23D120H6
INFIENON
5573
1.27
Dedicate Electronics (HK) Limited
SIDC23D120H6
Infinen
18000
1.65
MY Group (Asia) Limited
SIDC23D120E6
INFLNEON
5574
2.03
Dedicate Electronics (HK) Limited
SIDC23D120E6
Infineon Technologies A...
18000
2.41
MY Group (Asia) Limited