Description
DIODE GEN PURP 600V 100A WAFER Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55~C ~ 150~C
Part Number | SIDC42D60E6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE GEN PURP 600V 100A WAFER |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 100A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.25V @ 100A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 27µA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Sawn on foil |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
SIDC42D60E6
INFIENON
5000
0.68
TY International components Limited
SIDC42D60E6
Infinen
18000
1.435
MY Group (Asia) Limited
SIDC42D120E6
INFLNEON
5000
2.19
TY International components Limited
SIDC42D120E6
Infineon Technologies A...
18000
2.945
MY Group (Asia) Limited
SIDC42D120H8
INFINEON/IR
2650
3.7
Wuhan P&S Information Technology Co., Ltd.