Description
DIODE GEN PURP 1.2KV 100A WAFER Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55~C ~ 150~C
Part Number | SIDC53D120H6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE GEN PURP 1.2KV 100A WAFER |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 100A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 100A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 27µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Sawn on foil |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
SIDC53D120H6
INFIENON
5000
0.53
TY International components Limited
SIDC53D120H6
Infinen
18000
0.64
MY Group (Asia) Limited