Description
Sep 27, 2011 SPA06N80C3 . CoolMOS. TM. Power Transistor. Features. New revolutionary high voltage technology. Extreme dv/dt rated. High peak 2. 3. Material Content Data Sheet. Sales Product Name. SPA06N80C3 . Issued. 27. July 2016. MA#. MA000452864. Package. PG-TO220-3-111. Weight*. SPA07N60CFD. SPA11N60CFD. SPA15N60CFD. SPA20N60CFD. SPA07N65C3. SPA11N65C3. SPA20N65C3. SPA02N80C3. SPA04N80C3. SPA06N80C3 . SPA06N80C3 . MOSFET, N-ch, 800V, 0.9 Ohms. TO-220V. SPA06N80C3 . Infineon Technologies. 1. R1. NC. Resistor, Chip, W, 1%. 0.300 X 0.100 inch Std. SPA06N80C3 . SPD06N80C3. SPD06N80C3. 650. SPP08N80C3. SPA08N80C3 . SPI08N80C3. 450. SPP11N80C3. SPA11N80C3. SPW11N80C3. 290.
Part Number | SPA06N80C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 6A TO220FP |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 39W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-FP |
Package / Case | TO-220-3 Full Pack |
Image |
Hot Offer
SPA06N80C3
INFINEON/IR
936
3.31
RX ELECTRONICS LIMITED
SPA06N80C3
INFIENON
18590
0.12
Useta Tech (HK) Limited
SPA06N80C3
Infinen
23288
0.9175
HK HEQING ELECTRONICS LIMITED
SPA06N80C3
INFLNEON
32500
1.715
Gallop Great Holdings (Hong Kong) Limited
SPA06N80C3
Infineon Technologies A...
2500
2.5125
Nosin (HK) Electronics Co.