Part Number | SPB08P06PGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 60V 8.8A TO-263 |
Series | SIPMOS |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 6.2A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
SPB08P06PGATMA1
INFIENON
1000
0.39
MY Group (Asia) Limited
SPB08P06PGATMA1
Infinen
28000
1.24
CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED
SPB08P06P
INFLNEON
1404
2.09
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd
SPB08P06P G
Infineon Technologies A...
1000
2.94
Hengguang (HK) Electronics Trading Limited
SPB08P06PG
INFINEON/IR
100
3.79
C&G Electronics (HK) Co., Ltd