Part Number | SPB20N60S5ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 20A TO-263 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
SPB20N60S5ATMA1
INFIENON
5170
1.45
Dedicate Electronics (HK) Limited
SPB20N60S5ATMA1
Infinen
10
2.1775
TLF ELECTRONICS LTD
SPB20N60S5ATMA1
INFLNEON
70000
2.905
YK TECH ELECTRONIC CO., LIMITED
SPB20N60S5ATMA1
Infineon Technologies A...
8257
3.6325
Viassion Technology Co., Limited
SPB20N60S5ATMA1
INFINEON/IR
1000
4.36
MY Group (Asia) Limited