Part Number | SPB80N06S2L-H5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 80A D2PAK |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6640pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
SPB80N06S2L-H5
INFIENON
10005
1.39
HK HEQING ELECTRONICS LIMITED
SPB80N06S2L-H5
Infinen
6318
1.865
Gallop Great Holdings (Hong Kong) Limited
SPB80N06S2L-H5
INFLNEON
55300
2.34
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SPB80N06S2L-H5
Infineon Technologies A...
17318
2.815
CIS Ltd (CHECK IC SOLUTION LIMITED)
SPB80N06S2L-H5
INFINEON/IR
10000
3.29
Far East Electronics Technology Limited