Part Number | SPB80P06P G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 60V 80A TO-263 |
Series | SIPMOS |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 5.5mA |
Gate Charge (Qg) (Max) @ Vgs | 173nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5033pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 340W (Tc) |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 64A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
SPB80P06P
INFIENON
59187
0.53
HK HEQING ELECTRONICS LIMITED
SPB80P06P G
Infinen
3000
1.5475
Shenzhen HTIC Electronic Co.,Ltd
SPB80P06P G
INFLNEON
3000
2.565
Redstar Electronic Limited
SPB80P06P
Infineon Technologies A...
5788
3.5825
Gallop Great Holdings (Hong Kong) Limited
SPB80P06P 80P06P
INFINEON/IR
13570
4.6
CIS Ltd (CHECK IC SOLUTION LIMITED)