Part Number | SPD01N60C3BTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 0.8A TO-252 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 11W (Tc) |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD01N60C3BTMA1
INFIENON
1000
0.19
MY Group (Asia) Limited
SPD01N60C3BTMA1
Infinen
200000
0.975
IC Chip Co., Ltd.
SPD01N60C3BTMA1
INFLNEON
5139
1.76
Dedicate Electronics (HK) Limited
SPD01N60C3BTMA1
Infineon Technologies A...
10000
2.545
Hong Kong Huoji Electronics Co., Limited
SPD01N60C3BTMA1
INFINEON/IR
8500
3.33
Ysx Tech Co., Limited