Part Number | SPD02N80C3ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 2A 3TO252 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 120µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 Ohm @ 1.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD02N80C3ATMA1
INFIENON
391
1.89
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SPD02N80C3ATMA1
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SPD02N80C3ATMA1
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CIS Ltd (CHECK IC SOLUTION LIMITED)
SPD02N80C3ATMA1
Infineon Technologies A...
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N&S Electronic Co., Limited
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