Part Number | SPD06N80C3ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 6A 3TO252 |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD06N80C3ATMA1
INFIENON
20520
1.63
Useta Tech (HK) Limited
SPD06N80C3ATMA1
Infinen
5000000
2.0975
Hongkong Shengshi Electronics Limited
SPD06N80C3ATMA1
INFLNEON
2500
2.565
E-Core Electronics Co.
SPD06N80C3ATMA1 06N80C3
Infineon Technologies A...
15000
3.0325
Shenzhen Tecrutter Technology Co. , Ltd.
SPD06N80C3ATMA1
INFINEON/IR
55300
3.5
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED