Rated 
(4/5) based on 10 customer reviews
(4/5) based on 10 customer reviews
Description
Sep 3, 2012 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. R DS(on)=f(T j); I D=-11.3 A; V GS=-10 V. V GS(th)=f(T j); V GS=V DS; AEC-Q100 Qualified With the Following Results: Exceeds HBM ESD Classification Level 2. Device CDM ESD Classification Level C4B. Maximum reverse
| Part Number | SPD15P10PLGBTMA1 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET P-CH 100V 15A TO252-3 |
| Series | SIPMOS |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1.54mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 11.3A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
Lowest Price: $0.94
Highest Price: $3.92
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SPD15P10PLGBTMA1
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Shenzhen Fuxinwei Semiconductor Co., Ltd
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SPD15P10PLGBTMA1
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Kunlida Electronics (HK) Limited
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Part Number:
SPD15P10PLGBTMA1
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INFLNEON
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Company:
Hongkong Yunling Electronics Co.,Limited
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Part Number:
SPD15P10PLGBTMA1
Brand:
Infineon Technologies A...
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46566
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Company:
Shenzhen WTX Capacitor Co., Ltd.
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