Part Number | SPD30N03S2L10GBTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 30A TO252-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 41.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD30N03S2L10GBTMA1
INFIENON
1000
0.64
MY Group (Asia) Limited
SPD30N03S2L10GBTMA1
Infinen
2600
1.425
Dopoint Hi-Tech Limited
SPD30N03S2L10GBTMA1
INFLNEON
2500
2.21
C-March Electronics Co.,Ltd
SPD30N03S2L-07
Infineon Technologies A...
1000
2.995
MY Group (Asia) Limited
SPD30N03S2L-10G
INFINEON/IR
6883
3.78
TY International Trade Limited