Part Number | SPI08N80C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 8A TO-262 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 470µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 5.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
SPI08N80C3
INFIENON
78
1.64
Gallop Great Holdings (Hong Kong) Limited
SPI08N80C3
Infinen
30000
2.965
Superior Electronics Limited
SPI08N80C3
INFLNEON
6357
4.29
Belt (HK) Electronics Co
SPI08N80C3
Infineon Technologies A...
5233
5.615
ATLANTIC TECHNOLOGY LIMITED
SPI08N80C3
INFINEON/IR
5
6.94
KWANGHUA TECHNOLOGY LIMITED