(5/5) based on 11 customer reviews
Description
Datasheet [ C]. Q g (typ.) @ 25C. [nC]. SPN01N60C3 . 0.3/0.2. 1.6. 6. 2.1 3.9. 0.45. 3.9. SPN02N60C3. 0.4/0.3. 2.2. 2.5. 2.1 3.9. 2.1 3.9. 2.1 3.9. 2.1 3.9. 2.1 3.9. BSP324. BSP299. BSP125. BSS127. BSS225. SPN01N60C3 . SPN03N60S5. SPN03N60C3. SPN02N60S5. SPN02N60C3. SPN04N60S5. BSP300 typ. Qg [ nC]. SPW32N50C3. 0.07 . 52A. SPW52N50C3. 6.0 . 0.8A. SPN01N60C3 . SPD01N60C3. SPU01N60C3. 3.0 . 1.9A. SPN02N60C3. SPD02N60C3. SPU02N60C3.
| Part Number | SPN01N60C3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 650V 0.3A SOT-223 |
| Series | CoolMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 500mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
Hot Offer
SPN01N60C3
INFIENON
80000
0.97
Shenzhen Fuxinwei Semiconductor Co., Ltd
SPN01N60C3
Infinen
223
2.355
HXY Electronics (HK) Co.,Limited
SPN01N60C3
INFLNEON
7500
3.74
Belt (HK) Electronics Co
SPN01N60C3
Infineon Technologies A...
200
5.125
Gallop Great Holdings (Hong Kong) Limited
SPN01N60C3
INFINEON/IR
40700
6.51
HK HEQING ELECTRONICS LIMITED
