Part Number | SPP11N80C3XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 800V 11A TO-220AB |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 680µA |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 7.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
SPP11N80C3XKSA1
INFIENON
5290
0.55
Useta Tech (HK) Limited
SPP11N80C3XKSA1
Infinen
2815
1.6675
UCAN TRADE (HK) LIMITED
SPP11N80C3XKSA1
INFLNEON
891
2.785
ShenZhen QiaFeng Electronics Co.,Ltd
SPP11N80C3XKSA1
Infineon Technologies A...
6860
3.9025
Ande Electronics Co., Limited
SPP11N80C3XKSA1
INFINEON/IR
2592
5.02
Genuine Mall (HK)Electronics Limited