Part Number | SPP15N60C3XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 15A TO-220 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 675µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1660pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 9.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
SPP15N60C3XKSA1
INFIENON
12000
0.46
Sunrise(HK)Electronics Technology Co., Limited
SPP15N60C3XKSA1
Infinen
12756
1.135
Viassion Technology Co., Limited
SPP15N60C3XKSA1
INFLNEON
220360
1.81
Cinty Int'l (HK) Industry Co., Limited
SPP15N60C3XKSA1
Infineon Technologies A...
49685
2.485
CIS Ltd (CHECK IC SOLUTION LIMITED)
SPP15N60C3XKSA1
INFINEON/IR
3200
3.16
HongKong Trusang Technology Co.,Ltd