Part Number | SPP20N65C3XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 20.7A TO-220-3 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
SPP20N65C3XKSA1
INFIENON
5903
0.79
YK TECH ELECTRONIC CO., LIMITED
SPP20N65C3XKSA1
Infinen
9948
1.4325
TLF ELECTRONICS LTD
SPP20N65C3XKSA1
INFLNEON
2077
2.075
Viassion Technology Co., Limited
SPP20N65C3XKSA1
Infineon Technologies A...
4850
2.7175
MY Group (Asia) Limited
SPP20N65C3XKSA1
INFINEON/IR
3983
3.36
Hlinsemi Electronics (HongKong) Co., Limited