Part Number | SPP21N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 21A TO-220AB |
Series | SIPMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 44µA |
Gate Charge (Qg) (Max) @ Vgs | 38.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 865pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
SPP21N10
INFIENON
2654
0.98
Xinye International Technology Limited
SPP21N10
Infinen
8860
1.8875
AIC Semiconductor Co., Limited
SPP21N10
INFLNEON
4430
2.795
HongKong Wanghua Technology Limited
SPP21N10
Infineon Technologies A...
1000
3.7025
MY Group (Asia) Limited
SPP21N10
INFINEON/IR
70000
4.61
ALPINE ELECTRONICS LTD