Part Number | SPP24N60C3HKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 24.3A TO-220 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 24.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 240W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 15.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Image |
SPP24N60C3HKSA1
INFIENON
6320
1.05
Dedicate Electronics (HK) Limited
SPP24N60C3HKSA1
Infinen
1000
1.7225
MY Group (Asia) Limited
SPP24N60
INFLNEON
18578
2.395
Yingxinyuan INT'L (Group) Limited
SPP24N60C3XKSA1
Infineon Technologies A...
1000
3.0675
MY Group (Asia) Limited
SPP24N60C3
INFINEON/IR
25000
3.74
Hong Kong Capital Industrial Co.,Ltd