Part Number | SPU03N60C3BKMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 3.2A TO-251 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 135µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
SPU03N60C3BKMA1
INFIENON
6293
1.09
Dedicate Electronics (HK) Limited
SPU03N60C3BKMA1
Infinen
1000
1.9875
MY Group (Asia) Limited
SPU03N60C3BKMA1
INFLNEON
1498
2.885
Transfer Multisort Elektronik Sp. z o.o.
SPU03N60C3BKMA1
Infineon Technologies A...
800
3.7825
Takson Electronics (H.K.) Co., Ltd.
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INFINEON/IR
2010
4.68
Ande Electronics Co., Limited