Part Number | SPW11N60C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 11A TO-247 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Image |
SPW11N60C3
INFIENON
23168
1.56
Useta Tech (HK) Limited
SPW11N60C3
Infinen
13888
2.975
HK HEQING ELECTRONICS LIMITED
SPW11N60C3
INFLNEON
54
4.39
Gallop Great Holdings (Hong Kong) Limited
SPW11N60C3
Infineon Technologies A...
50000
5.805
Seven-Two Tech (HK) Co., Limited
SPW11N60C3
INFINEON/IR
1300
7.22
WIN AND WIN ELECTRONICS LIMITED