Part Number | STFW3N170 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 1700V 2.6A |
Series | PowerMESH |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 13 Ohm @ 1.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PF |
Package / Case | TO-3P-3 Full Pack |
Image |
STFW3N170
INFIENON
2400
0.06
HK HEQING ELECTRONICS LIMITED
STFW3N170
Infinen
4800
1.4
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
STFW3N170
INFLNEON
6000
2.74
Riking Technology (HK) Co., Limited
STFW3N170
Infineon Technologies A...
2722
4.08
NEW IDEAS INDUSTRIAL CO., LIMITED
STFW3N170
INFINEON/IR
10400
5.42
CIS Ltd (CHECK IC SOLUTION LIMITED)