Part Number | STGW35NB60SD |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 600V 70A 200W TO247 |
Series | PowerMESH |
Packaging | - |
IGBT Type | Tube |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 70A |
Current - Collector Pulsed (Icm) | 250A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 20A |
Power - Max | 200W |
Switching Energy | 840µJ (on), 7.4mJ (off) |
Input Type | Standard |
Gate Charge | 83nC |
Td (on/off) @ 25°C | 92ns/1.1µs |
Test Condition | 480V, 20A, 100 Ohm, 15V |
Reverse Recovery Time (trr) | 44ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247-3 |
Image |
STGW35NB60SD
INFIENON
12800
1.16
Sunton Electronics Co., Limited
STGW35NB60SD
Infinen
100000
2.035
VBsemi Electronics Co., Limited
STGW35NB60SD
INFLNEON
8966
2.91
WIDEY INTERNATIONAL LIMITED
STGW35NB60SD
Infineon Technologies A...
12706
3.785
Cicotex Electronics (HK) Limited
STGW35NB60SD**
INFINEON/IR
49800
4.66
N&S Electronic Co., Limited